SemiQ Inc’s newest S7 package in its QSiC family of 1200V, half-bridge MOSFET and Schottky diode SiC power modules provides power engineers the flexibility of compact, high-efficiency, high-performance options in both new designs and drop-in-legacy system replacements that need greater efficiency.
A 529A MOSFET module (GCMX003A120S7B1), a 348A MOSFET module (GCMX005A120S7B1), and two low-noise SiC Schottky diode half-bridge modules (GHXS300A120S7D5 and GHXS400A120S7D5) are now available S7 package with industry-standard 62.0mm footprints and a height of just 17.0mm.
The S7 meets size, weight, and power requirements of such applications as induction heaters, welding equipment, and uninterruptible power supplies (UPS) to photovoltaic and wind inverters, energy storage systems, high-voltage DC-DC converters, and battery charging systems for electric vehicles (EVs). The modules’ small size and high-efficiency, low-loss operation reduces system heat dissipation and supports the use of smaller heatsinks.
The company claims that the high-performance ceramic modules achieve exceptional performance levels and support increased power density and more compact designs – especially in high-frequency and high-power environments.
SemiQ performs gate burn-in testing at the wafer level and a variety of stress tests to ensure a stable gate threshold voltage and premium gate oxide quality for each module. The stress tests include gate stress, high-temperature reverse bias (HTRB) drain stress, high humidity, high voltage, and high temperature (H3TRB), and meet automotive and industrial grade quality standards. All parts have undergone testing surpassing 1400V.
