Looking for Advanced SiC MOSFETs? Look No Further…
NoMIS Power Corporation is unveiling its first range of advanced 1200 V SiC MOSFETs at ICSCRM 2024, in Raleigh, N.C., Sept. 29th – Oct. 4th. The company developed a suite of next-gen power discrete and module technologies for release over the next 24 months.
The company claims its SiC technology delivers more rugged, reliable, and customizable performance based on novel designs and packaging architectures combined with a fabless model and service support. The initial products focus on the popular 1200 V node, addressing such major power electronics applications as EV onboard chargers, EV fast charging stations, motor drives, solar PV inverters, energy storage systems, and solid-state power controllers.
State-of-the-art SiC MOSFET technology, a more reliable gate oxide process, and 100% avalanche testing will deliver greater system efficiency, reduced cooling requirements, increased power density, and higher system switching frequency for improved overall system reliability.
The products will be available in multiple packaging options, including the 1200 V SiC MOSFET in a TO-247 3L package. Parts are available now through Digikey and direct from NoMIS, including customization options.
Find NoMIS Power’s advanced SiC MOSFET technology at ICSCRM 2024, Raleigh Convention Center, Booth# 177, and ECCE 2024 in Phoenix, Arizona, October 20-24.
