Comprehensive evaluation platform for GaN transistors launched

GaN Systems has launched a daughterboard style evaluation kit to help power design engineers easily evaluate the GaN E-HEMT performance in any system design, along with a universal motherboard (GS665MB-EVB). The family of four daughterboards ranging from 750 to 2,500W consists of two GaN Systems 650V GaN Enhancement-mode HEMTs (E-HEMTs) and all necessary circuits, including half-bridge gate drivers, isolated power supplies and an optional heatsink to form a high performance half bridge power stage.

Several notable features maximize the evaluation platform’s utility:

• The platform serves as a reference design and evaluation tool as well as a deployment-ready solution for easy in-system evaluation.
• The vertical mount style has a 35 mm height, which fits the majority of 1U design and allows evaluation of GaN E-HEMT in a traditional through-hole type power supply board.
• A current shunt position is provided for easy switching energy characterization testing.
• A universal form factor and footprint are used to allow customers to compare various power levels for optimal cost/performance decisions.

GaN Systems is also launching the GS61008P-EVBBK, a highly efficient 48 to 12V synchronous buck converter based on the GS61008P 100V, 90A GaN E-HEMT. This system demonstrates very high efficiency at frequencies up to 2 MHz, commonly desired in 48V systems.

GaN Systems VP Sales & Marketing, Larry Spaziani, stated, “By developing this family of GaN E-HEMT evaluation boards, we are providing power design engineers with the tools to easily evaluate and optimize GaN transistor performance in their systems. Our evaluation kits facilitate development of AC/DC, Energy storage, DC/DC and other power systems. The kits benefit developers across the consumer, datacenter, industrial, transportation, and energy markets.”

Available downloads:

gan-systems-gs665mb-evb-schematics-datasheet