New Converter Series for Fast Switching GaN Drivers
The isolated 1W DC/DC converter series RP-xx06S, designed by RECOM is now available from Rutronik. The series is built to power the latest GaN (Gallium Nitride) drivers. The converters meet the demanding requirements of GaN drivers with a 5200VDC isolation and a low isolation capacitance of less than 10pF.
GaN-FETs are increasingly being used as next-gen, high power devices for power electronics systems. They are characterized by superior performance, lower losses and higher switching speeds. However, in order to be able to use these advantages, suitable converters are necessary. GaN drivers require power supplies with an insulation barrier that can cope with the high switching voltages, high operating temperatures and fast slew rates.
The RP-xx06S series from RECOM comes with a pot-core that physically separates the input and output windings providing up to 6.4kV/DC isolation. This way, the isolation barrier stands up to even the harshest operating conditions. Thus, they are well suited for GaN devices in higher frequency telecom and aerospace applications. The converters have an output voltage of +6V which aims to efficiently switch GaN HEMTs (High Electron Mobility Transistors) without causing a gate dielectric breakdown.
Despite the high isolation grade, they fit into an industry standard SIP7 case. This should have the benefit of saving valuable space on the circuit board. Furthermore, the converters are IEC/EN-60950-1 certified and fully compliant to RoHS2 and REACH. Furthermore, the RP-xx06S series is safety certified to the latest UL/IEC60950 standard.
The converters are available from stock with input voltages of 5, 12, 15 or 24V at Rutronik24.com. RECOM offers a three-year warranty for the RP-xx06S-series.
