High-Performance 800 VDC GaN Inverter Outshines SiC

Cambridge GaN Devices (CGD) and IFP Energies Nouvelles (IFPEN) have developed a cutting-edge 800 VDC inverter, demonstrating the powerful potential of GaN technology for high-efficiency applications like electric vehicles (EVs). This innovative inverter leverages CGD’s ICeGaN® 650 V GaN ICs to achieve a super-high-power density of 30 kW/l—surpassing traditional silicon carbide (SiC) devices both in density and cost-effectiveness.

Bringing High Efficiency to EV Inverters

With an 800 VDC system, this GaN-based inverter is tailored for high-voltage applications such as EV powertrains, where efficiency is paramount. The design delivers peak motor power of over 100 kW and continuous power at 75 kW. The demo, featuring a 3-phase output and capable of handling peak currents up to 125 A, confirms GaN’s advantages over traditional materials.

Key Advantages of GaN Technology

This multi-level GaN inverter offers significant improvements over conventional options, particularly in efficiency and thermal management:

• Enhanced Efficiency: Higher efficiency directly improves EV battery range and reduces the need for frequent recharges.
• Higher Switching Frequencies: GaN transistors operate at faster speeds than silicon, reducing motor iron losses and boosting overall performance.
• Lower Electromagnetic Interference (EMI): The inverter’s 3-level topology minimizes EMI, enhancing system reliability.
• Improved Thermal Management: Aluminum-core insulated boards improve heat dissipation, extending device lifespan.
• Modular, Scalable Design: The modular design allows the inverter to adapt to various system requirements and power levels.

A Breakthrough in High-Voltage Traction Inverters

The success of this demo underscores the potential of GaN in high-voltage applications, particularly for EVs and other energy-demanding sectors. Gaetano De Paola, Program Manager at IFPEN, emphasized GaN’s cost and performance advantages: “Our results show that GaN is a breakthrough technology for high-voltage traction inverters.”

With CGD and IFPEN’s innovative approach, GaN is poised to play a crucial role in advancing EV efficiency and sustainability, providing a more powerful alternative to traditional SiC inverters.

Learn More: https://camgandevices.com/