solar

Solar power, the fastest-growing energy sector worldwide, stands as a cornerstone of the Net Zero Emissions by 2050 initiative, aiming to eliminate carbon dioxide emissions within the next three decades. While solar photovoltaic (PV) power…

UC Santa Barbara researchers created a first-ever “movie” of electric charges traveling across the interface of two different semiconductor materials. Employing scanning ultrafast electron (SUEM) techniques developed in the Bolin Liao lab,…

NoMIS Power Corporation is unveiling its first range of advanced 1200 V SiC MOSFETs at ICSCRM 2024, in Raleigh, N.C., Sept. 29th - Oct. 4th. The company developed a suite of next-gen power discrete and module technologies for release over…

September 30, 2024 Mouser Electronics, Inc., the authorized global distributor with the newest electronic components and industrial automation products, is now shipping the PSC1665x silicon carbide (SiC) Schottky diodes, part of …

September 12, 2024 TDK Corporation (TSE:6762) announces the EPCOS B32377G, a new series of three-phase AC filter capacitors in delta connection filled with nonflammable nitrogen gas instead of the soft polyurethane resin used…

Researchers have developed a groundbreaking supercapacitor that can be charged by exposure to light, presenting exciting possibilities for self-powered electronics such as sensors and streetlights. Unlike traditional capacitors that store…

Explore some of the most groundbreaking tech records in history! From the world's largest solar farms powering the future to the first-ever 5G rollouts revolutionizing communication and record-breaking data storage capacities pushing the…

SemiQ Inc’s newest S7 package in its QSiC family of 1200V, half-bridge MOSFET and Schottky diode SiC power modules provides power engineers the flexibility of compact, high-efficiency, high-performance options in both new designs and…

SEOUL, South Korea, July 29, 2024 Magnachip Semiconductor Corporation (“Magnachip” or “Company”) (NYSE: MX) announced today the completion of the development of its 1200V 75A Insulated Gate Bipolar Transistor (IGBT) in a TO-247PLUS…

SCOTTSDALE, Ariz. – July 18, 2024 NEWS HIGHLIGHTS  Latest generation EliteSiC M3e MOSFETs decrease turn-off losses by up to 50% for electrification applications  Platform uniquely achieves a reduction in both conduction and…